Unlock unparalleled performance and reliability for your server with the Samsung 256GB DDR5 ECC Registered Memory Module (M321RBGA0B40-CWK).
Engineered for demanding enterprise environments, this state-of-the-art DDR5 memory module delivers a massive 256GB capacity, ensuring your systems can handle the most complex workloads with ease. Featuring advanced ECC (Error-Correcting Code) technology, it guarantees data integrity and stability, minimizing the risk of errors that can disrupt critical operations. The registered DIMM design enhances signal integrity by buffering clock, command, and control signals, further boosting system stability and allowing for higher memory capacities and densities. This module boasts a blazing-fast PC5-38400 speed rating, translating to 4800MHz clock frequency, which significantly accelerates data processing and application responsiveness. With its 8RX4 octal rank configuration and X4 chip organization, this memory module is optimized for maximum bandwidth and efficient data transfer.
Ideal for high-performance servers, workstations, and data centers in Oman, the Samsung 256GB DDR5 memory module ensures that your infrastructure can keep pace with the ever-increasing demands of modern computing. Experience smoother multitasking, faster data analysis, and seamless execution of virtualized environments. Its robust design and superior specifications make it a perfect upgrade for boosting the overall efficiency and capabilities of your server hardware.
Key Features:
- Massive 256GB DDR5 SDRAM capacity for extreme multitasking and data handling.
- ECC (Error-Correcting Code) for superior data integrity and system stability.
- Registered DIMM (RDIMM) design for enhanced signal integrity and scalability.
- High-speed PC5-38400 rating with 4800MHz clock frequency for accelerated performance.
- 8RX4 Octal Rank and X4 chip organization for optimized bandwidth.
- 288-pin DIMM form factor compatible with a wide range of server motherboards.
- 1.1V low voltage operation for improved power efficiency.
